Richard A. Kiehl

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Based on a simple circuit model of a tunneling phase logic (TPL) element that is driven by a sinusoidal voltage source and biased by a DC voltage source, we present simulations of operations in cellular nonlinear networks (CNN) that could potentially be used to perform general computations in 2D arrays of simple, locally connected nanoscale devices. Some(More)
A method for laying out arrays of components in programmable 2D arrangements with nanometer-scale precision is needed for the manufacture of high density nanoelectronic circuitry. We report programmed self-assembly of gold prototype nanoelectronic components into closely packed rows with precisely defined inter-row spacings by in situ hybridization of(More)
Regular 2D arrays of multiple types of nanocomponents were constructed by self-assembly to DNA scaffolding with alternating rows of sequence-encoded hybridization sites. Different-sized Au particles coated with DNA complementary to one of the sites were bound to the scaffolding, producing alternating rows of the two nanocomponents with a 32-nm inter-row(More)
We report the self-assembly of metallic nanoparticle arrays using DNA crystals as a programmable molecular scaffolding. Gold nanoparticles, 1.4 nm in diameter, are assembled in two-dimensional arrays with interparticle spacings of 4 and 64 nm. The nanoparticles form precisely integrated components, which are covalently bonded to the DNA scaffolding. These(More)
Negative differential resistance ͑NDR͒ is reported for a bilayer molecular junction. The system is comprised of a Hg–alkanethiol//arenethiol–Au bilayer molecular junction formed by bringing into contact a tetradecanethiol self-assembled monolayer ͑SAM͒-coated drop of Hg with the surface of an oligo͑phenylene-ethynylene͒ SAM on Au. Persistent, reproducible(More)
Experimental results on the electrical characteristics of Hg-alkanethiol/ arenethiol-Au molecular junctions are used to develop a physical model for the hysteretic negative-differential resistance ͑NDR͒ for these, and possibly other, metal-molecule-metal junctions. The dependence of the room-temperature current-voltage characteristic on sweep direction and(More)
Microwave generation in a NEgative Zesistance Field-Effect Transistor (NERFET) is reported for the first time. This device is based on a GaAs/AlGaAs heterostructure which exhibits negative differential resistance due to a transfer of hot-electrons out of a source-drain channel and into a conducting substrate. In an untuned microwave circuit at 77 K, the(More)