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The development of a new hybrid packaging method is reported, where the front end radio frequency (RF) element, namely a modified quasiYagi antenna, is integrated with an optical transmitter and an optical receiver on single PCB for dual-mode, i.e. RF/free space optical communication. The VCSEL and the pin diode are placed on the antenna directors to share(More)
A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.
Electrically controlled wavelength switchable terahertz band pass filter based on photonic crystal structures with LC defect layer is proposed and discussed. The wavelength switching can be realized by reorienting liquid crystal molecules through adjusting the applied electric field. Numerical analyses results have shown that the proposed structure has the(More)
We describe a time resolved, interferometric method to detect terahertz (THz) pulses based on the Sagnac geometry. A ZnTe electro-optic crystal is placed in one arm of the interferometer, and the THz-induced optical phase shift is demodulated by allowing the two arms to optically interfere. The theoretical principle behind this new method is illustrated and(More)
A free space optical (FSO)/radio frequency (RF) dual mode communication transmitter using a LED integrated within the geometry of a planar patch antenna on a shared substrate is demonstrated. An experimental FSO link is constructed with a bare die visible LED and a commercial silicon photodetector. The antenna radiating at a centre frequency of 10 GHz,(More)
In this paper, a S-band bandpass filter was proposed with stopband performance enhanced by metamaterial units, complementary split ring resonators (CSRRs). This filter was composed by multiple stepped impedance resonators which made first spurious peak appear at frequency about four times the operation frequency. The CSRRs were then used to suppress the(More)
An array of inverted InGaAs metal–semiconductor–metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In–Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 mm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70%(More)
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