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In the past two decades, Micro Fluidic Systems (MFS) have emerged as a powerful tool for biosensing, particularly in enriching and purifying molecules and cells in biological samples. Compared with conventional sensing techniques, distinctive advantages of using MFS for biomedicine include ultra-high sensitivity, higher throughput, in-situ monitoring and(More)
We present a micro-CEC chip carrying out a highly efficient separation of dsDNA fragments through vertically aligned multi-wall carbon nanotubes (MWCNTs) in a microchannel. The vertically aligned MWCNTs were grown directly in the microchannel to form straight nanopillar arrays as ordered and directional chromatographic supports. 1-Pyrenedodecanoic acid was(More)
This article demonstrates that a three-electrode electrochemical (EC) detector and an electric decoupler could be fabricated in the same glass chip and integrated with an O2-plasma-treated PDMS layer using microfabrication techniques to form the capillary electrophoresis (CE) microchip. The platinized decoupler could mostly decouple the electrochemical(More)
A novel nanocapillary electrophoretic electrochemical (Nano-CEEC) chip has been developed to demonstrate the possibility of zeptomole-level detection of neurotransmitters released from single living cells. The chip integrates three subunits to collect and concentrate scarce neurotransmitters released from single PC-12 cells, including a pair of targeting(More)
In this research, a technique incorporating dual-asymmetry electrokinetic flow (DAEKF) was applied to a nanoCE electrochemical device for the pre-concentration and detection of catecholamines. The DAEKF was constructed by first generating a zeta-potential difference between the top and bottom walls, which had been pre-treated with O2 and H2O surface plasma,(More)
A novel concept for electroosmotic flow (EOF) control in a microfluidic chip is presented by using a self-assembled monolayer as the insulator of a flow field-effect transistor. Bidirectional EOF control with mobility values of 3.4 × 10(-4) and -3.1 × 10(-4) cm(2)/V s can be attained, corresponding to the applied gate voltage at -0.8 and 0.8 V,(More)
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