Rebecca D. Mih

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An ultralow-standby-power technology has been developed in both 0.18-␮m and 0.13-␮m lithography nodes for embedded and standalone SRAM applications. The ultralow-leakage six-transistor (6T) SRAM cell sizes are 4.81 ␮m 2 and 2.34 ␮m 2 , corresponding respectively to the 0.18-␮m and 0.13-␮m design dimensions. The measured array standby leakage is equal to an(More)
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