Razaidi Hussin

  • Citations Per Year
Learn More
In this paper, we present a simulation flow based on TCAD model calibration against experimental transistor measurement and doping profile reverse engineering. Further the physical astatistical variability simulations at TCAD level are also adjusted to match the statistical measurement. This is folloed up by oxide wear out reliability characterization and(More)
In this paper we present experimental results of single trap impact on bulk MOSFETs, shedding light on counter intuitive behavior when increasing the gate bias. Using a well calibrated 3D TCAD model, statistical simulations at atomistic level are performed, demonstrating that the interactions between the traps and the percolation path are responsible for(More)
This paper investigates the accuracy and issues of modeling carrier mobility in the channel of a nanoscaled MOSFET in the presence of discrete charges trapped at the channel/oxide interface. By comparing drift-diffusion (DD) and Monte Carlo (MC) simulation results, a quasi-local mobility model accounting for the complex scattering profile associated with a(More)
New architectures introduction succeeded in reducing the device performances dispersion in scaled transistors, but as a consequence the relative importance of oxide reliability increased. In this work we present original results of charged interface traps impact on bulk, FDSOI and Fin FETs performances. Traps time constants are analyzed and recoverable and(More)
The factors contributing to the FET threshold voltage shift &#x0394;&#x03BD;<inf>th</inf> caused by charging of an individual trap, such as during Random Telegraph Noise (RTN), are discussed by analyzing device-calibrated simulation data. The &#x0394;&#x03BD;<inf>th</inf> distribution is observed to be a convolution of i) the position of the trap along the(More)
  • 1