Raymond Krom

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Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm. The as-grown Si p þin þ structures were synthesised using solid source molecular beam epitaxy,(More)
This paper discusses the low-frequency noise behavior of SiGe-channel bulk FinFETs processed on (100) and (110) Si wafers. A comparison is also made with planar SiGe-channel pMOSFETs. It is shown that for devices with carriers confined in the quantum well, only 1/f noise is observed, dominated by mobility fluctuations. Surprisingly, SiGe pMOSFETs fabricated(More)
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