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This paper demonstrates that quantum-confined Stark effect (QCSE) within the multiple quantum wells (MQWs) can be suppressed by the growths of InGaN-based light-emitting diodes (LEDs) on the nano-sized patterned c-plane sapphire substrates (PCSSs) with reducing the space. The efficiency droop is also determined by QCSE. As verified by the experimentally(More)
In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD(More)
Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and(More)
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The(More)
The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce(More)
High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density(More)
We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning(More)
— We report an anomalous decrease of off-state drain leakage current (I Off−state) of GaN/AlGaN HEMTs upon dual optical excitation. The phenomenon was observed accidentally during dc characterization of devices when both fluorescent white room light and incandescent optical microscope light were turned on. A similar phenomenon was observed and verified(More)
We have investigated the effects of nonradiative recombination centers (NRCs) on the device performances of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) incorporating low-temperature n-GaN (LT-GaN) underlying layers. Inserting an LT-GaN underlying layer prior to growing the MQWs is a successful means of separating the induced NRCs as a(More)