Rawid Banchuin

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In this research, the model which describes the effect of the stochastic nature of the bias current to the inductance of the OTA-based inductor has been proposed. The model has been found to provide the complete probabilistic distribution information of the resulting inductance with sufficient accuracy. This research has been performed based upon the up to(More)
Commonly known, the gyrator-based OTA simulated floating inductor can be divided into two categories; 3-OTA and 4-OTA structure which perform identically in the ideal phenomena where all OTA's nonidealities i.e. parasitic elements, effect of finite open-loop bandwidth and noise have been neglected. It has been found in R. Banchuin et al. (2005) that the(More)
In this research, we have studied the practical OTA-based floating inductor and propose its complete passive equivalent circuit where the finite bandwidth effect which used to be neglected in the previous work is now included. Furthermore, we also propose the accuracy evaluation of this passive equivalent circuit by comparing it with the target active(More)
Abstract. In this research, the novel models of random variation in Ids which is a key parameter of any MOS transistor, have been proposed in this research as the probability density functions. Both triode and saturation regions have been explored. Unlike the previous researches, this research has been performed based upon the up to dated nanoscale regime(More)
In this research, analytical analysis and modelling of statistical variations in maximum frequency of oscillation of subthreshold MOSFET, has been proposed with major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET's manufacturing process, have been taken into account. The resulting model(More)
This paper proposes an analytical prediction formula of probability distribution of random variation in high frequency performance of weak inversion region operated scaled MOSFET where the manufacturing process induced physical defects of MOSFET have been taken into account. Furthermore, the correlation between process parameter included random variables(More)
According to the chronological literature survey, there exist three types of the on-chip transformer i.e the traditional on-chip passive transformer, the Distributed active transformer (DAT), and the CMOS gyrator-C active transformer (Yuan 2007). Formerly, there exist many review articles on the on-chip transformer. However, these articles focus on the(More)
In this research, the model which describes the stochastic effect of the bias current to the inductance of the monolithic active inductor has been proposed. The model can accurately capture the stochastic behavior of the resulting inductance with sufficient confidence. This research has been performed based upon the up to dated CMOS technology. The proposed(More)