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Commonly known, the gyrator-based OTA simulated floating inductor can be divided into two categories; 3-OTA and 4-OTA structure which perform identically in the ideal phenomena where all OTA's nonidealities i.e. parasitic elements, effect of finite open-loop bandwidth and noise have been neglected. It has been found in R. Banchuin et al. (2005) that the(More)
In this research, the model which describes the effect of the stochastic nature of the bias current to the inductance of the OTA-based inductor has been proposed. The model has been found to provide the complete probabilistic distribution information of the resulting inductance with sufficient accuracy. This research has been performed based upon the up to(More)
In this research, we have studied the practical OTA-based floating inductor and propose its complete passive equivalent circuit where the finite bandwidth effect which used to be neglected in the previous work is now included. Furthermore, we also propose the accuracy evaluation of this passive equivalent circuit by comparing it with the target active(More)
In this research, the novel models of random variation in I ds which is a key parameter of any MOS transistor, have been proposed in this research as the probability density functions. Both triode and saturation regions have been explored. Unlike the previous researches, this research has been performed based upon the up to dated nanoscale regime MOS(More)
In this research, analytical analysis and modelling of statistical variations in maximum frequency of oscillation of subthreshold MOSFET, has been proposed with major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET's manufacturing process, have been taken into account. The resulting model(More)
In this research, a generic analytical model of voltage response of fractance in time domain which is often cited in various disciplines such as control engineering and electronic engineering etc., has been proposed. This model can be applied to fractance of any order under any type of current excitation. So, it has been found to be beneficial to various(More)
In this study, the model which describes the effect of the stochastic nature of the bias current to the inductance of the on chip active inductor has been proposed. This study has been performed based on the up to dated CMOS technology. For the model derivation and verification, the fundamental concept of stochastic process and goodness of fit test have(More)