Rawid Banchuin

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In this research, the novel comprehensive probabilistic analytical model of the subthreshold MOSFET's performance affected by both random dopant fluctuation and process variation effects has been proposed. The up to dated Takeuchi's physical level random variation model has been adopted. The proposed model has been found to be analytic, powerful and(More)
In this research, the novel models of random variation in I ds which is a key parameter of any MOS transistor, have been proposed in this research as the probability density functions. Both triode and saturation regions have been explored. Unlike the previous researches, this research has been performed based upon the up to dated nanoscale regime MOS(More)
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