Ravindra Singh Kushwah

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In this paper, we introduce the unique features by modified symmetrical double-gate (DG) silicon-on-insulator (SOI) MOSFET. The leading modified structure of double gate (DG) SOI MOSFET, reduces short-channel effects (SCEs) when compared with single gate (SG) SOI MOSFET. In this model, we included the calculation of the electrical field, surface potential,(More)
In this paper, we included designing of low power tunable analog circuits using double gate (DG) MOSFET, where the front gate output is changed by control voltage on the back gate. The DG devices can be used to improve the performance and reduce the power dissipation when front gate and back gate both are independently controlled. In this paper, we included(More)
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