Ravi Pillarisetty

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In this work, 3-D Tri-gate and ultra-thin body planar InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and scaled gate-to-source/gate-to-drain (LSIDE) have been(More)
In this work, non-planar, multi-gate InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (LSIDE) of 5nm are(More)
This paper describes for the first time, the heterogeneous integration of In0.7Ga0.3As quantum well device structure on Si substrate through a novel, thin composite metamorphic buffer architecture(More)
In this paper for the first time, the logic performance of Schottky-gate In<inf>0.7</inf>Ga<inf>0.3</inf>As QWFETs is measured and evaluated against that of advanced Strained Si MOSFETs from Vcc =(More)