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  • David Pawlik, Brian Romanczyk, +10 authors Raj Jammy
  • Physics
  • International Electron Devices Meeting
  • 2012 (First Publication: 1 December 2012)
  • III-V tunneling field effect transistors (TFET) for low voltage logic applications (<;0.5V) have gained attention with the demonstration of sub-60 mV/dec. subthreshold slopes [1]. A key outstandingContinue Reading
  • R.J.W. Hill, D. A. J. Moran, +10 authors I. Thayne
  • Chemistry
  • IEEE Electron Device Letters
  • 2007 (First Publication: 1 December 2007)
  • We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-k (k = 20)Continue Reading