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—In this paper, an analytical model for calculating the channel potential and current–voltage characteristics in a symmetric tunneling field-effect transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a(More)
Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction form potentially useful transistor structures. Two prior theoretical treatments of such devices are discussed; the(More)
The characteristics of tunnel junctions formed between n-and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D–2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak(More)
All large-scale graphene films contain extended topological defects dividing graphene into domains or grains. Here, we spatially map electronic transport near specific domain and grain boundaries in both epitaxial graphene grown on SiC and CVD graphene on Cu subsequently transferred to a SiO2 substrate, with one-to-one correspondence to boundary structures.(More)
The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electrons with energies 0 – 8 eV above the vacuum level are observed in the experiment. These oscillations are reproduced in theory, based on a first-principles density functional(More)
The spatially resolved thermoelectric power is studied on epitaxial graphene on SiC with direct correspondence to graphene atomic structures by a scanning tunneling microscopy (STM) method. A thermovoltage arises from a temperature gradient between the STM tip and the sample, and variations of thermovoltage are distinguished at defects and boundaries with(More)
Hydrogen etching of 6H-and 4H-SiC(0001) surfaces is studied. The as-polished substrates contain a large number of scratches arising from the polishing process which are eliminated by hydrogen etching. Etching is carried out in a flow of hydrogen gas at atmospheric pressure and temperatures around 1600-1700 C attained on a tantalum strip heater. Post-etching(More)