Ram S. Katiyar

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The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena(More)
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as 'the Holy Grail' of magnetoelectricity. We report this long-sought effect, obtained using a new physical process of coupling between magnetic and ferroelectric nanoregions. Solid state solutions of PFW [Pb(Fe(2/3)W(1/3))O(3)] and PZT(More)
Recently, lead iron tantalate/lead zirconium titanate (PZTFT) was demonstrated to possess large, but unreliable, magnetoelectric coupling at room temperature. Such large coupling would be desirable for device applications but reproducibility would also be critical. To better understand the coupling, the properties of all 3 ferroic order parameters, elastic,(More)
Thin single-crystal lamellae cut from Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 ceramic samples have been integrated into simple coplanar capacitor devices. The influence of applied electric and magnetic fields on ferroelectric domain configurations has been mapped, using piezoresponse force microscopy. The extent to which magnetic fields alter the ferroelectric domains was(More)
Resonant Ultrasound Spectroscopy has been used to characterize elastic and anelastic anomalies in a polycrystalline sample of multiferroic Pb(Fe(0.5)Nb(0.5))O(3) (PFN). Elastic softening begins at ~550 K, which is close to the Burns temperature marking the development of dynamical polar nanoregions. A small increase in acoustic loss at ~425 K coincides with(More)
We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric(More)
MoS2 is an important member of the transition metal dichalcogenides that is emerging as a potential 2D atomically thin layered material for low power electronic and optoelectronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered at the nanoscale in(More)
We report the breakdown electric field and energy density of laser ablated BaTiO(3)/Ba((1-x))Sr(x)TiO(3) (x = 0.7) (BT/BST) relaxor-ferroelectric superlattices (SLs) grown on (100) MgO single crystal substrates. The dielectric constant shows a frequency dispersion below the dielectric maximum temperature (T(m)) with a merger above T(m) behaving similarly to(More)
The existence of ferromagnetism in the wonder material graphene has opened up the path for many future spintronics and memory applications. But simultaneously it is very important to understand the variation of these properties with temperature in regards to the device applications. Here we observed defect induced ferromagnetism in chemically reduced(More)
We report here the first observation of the low frequency Raman scattering from acoustic phonons in semiconducting zinc oxide (ZnO) nanoparticles without embedding in any solid matrix. ZnO nanoparticles (size 5-10 nm) with nearly spherical shape have been synthesized using a chemical route. A shift in the phonon peaks toward higher frequencies along with(More)