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—Spin Transfer Torque (STT) memory is an emerging and promising non-volatile storage technology. However, the high write current is still a major challenge which leads to a huge power consumption of the memory. Due to an inherent torque asymmetry of the Magnetic Tunnel Junction (MTJ) device employed in STT memories, the switching time between parallel to(More)
—Spin Transfer Torque (STT) is a promising emerging memory technology because of its various advantages such as non-volatility, high density, virtually infinite endurance, scalability and CMOS compatibility. Despite all these features, high write current is still a challenge for its widespread use. When writing a value that is already stored, a significant(More)
—Magnetic Random Access Memory (MRAM) is a very promising emerging memory technology because of its various advantages such as non-volatility, high density and scala-bility. In particular, Spin Orbit Torque (SOT) MRAM is gaining interest as it comes along with all the benefits of its predecessor Spin Transfer Torque (STT) MRAM, but is supposed to eliminate(More)
—Magnetic Random Access Memory (MRAM) is a very promising emerging memory technology because of its various advantages such as non-volatility, high density and scalability. In particular, Spin Orbit Torque (SOT) MRAM is gaining interest as it comes along with all the benefits of its predecessor Spin Transfer Torque (STT) MRAM, but is supposed to eliminate(More)
—Radiation-induced multiple event transients (METs) are expected to become more frequent than single event tran-sients (SETs) at nanoscale CMOS technology nodes. In this paper, a fast and accurate layout-based soft error rate (SER) assessment technique with consideration of both SET and MET fault models is presented. Despite existing techniques in which the(More)
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising alternative to SRAM due to its low leakage and scalability advantages. In fact, although being more energy-efficient than SRAM, STT-MRAM caches at higher levels (e.g. L3) still incur a high energy consumption due to 1) high leakage in their read and write circuits and 2) high(More)
Multi-port memories are widely used as shared memory, such as register files, in a microprocessor system, and its number of ports and capacities are significantly increasing with every product generation. However, with technology advancements, multi-port memories are facing severe challenges due to their bit-cell leakage and scalability, as well as(More)