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The temperature induced melting transition of a self-complementary DNA strand covalently attached at the 5' end to the surface of a gold interdigitated microelectrode (GIME) was monitored in a novel, label-free, manner. The structural state of the hairpin was assessed by measuring four different electronic properties of the GIME (capacitance, impedance,(More)
We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending on the concentration of nanowire suspension and the distribution of electrical field, various configurations of nanowire interconnects, such as single, chained, and branched nanowires(More)
Producing large-scale graphene films with controllable patterns is an essential component of graphene-based nanodevice fabrication. Current methods of graphene pattern preparation involve either high cost, low throughput patterning processes or sophisticated instruments, hindering their large-scale fabrication and practical applications. We report a simple,(More)
Three-dimensional interdigitated electrodes (IDEs) have been investigated as sensing elements for biosensors. Electric field and current density were simulated in the vicinity of these electrodes as a function of the electrode width, gap, and height to determine the optimum geometry. Both the height and the gap between the electrodes were found to have(More)
Single-crystal SiGe nanowires were synthesized via the vapour-liquid-solid (VLS) growth mechanism using disilane and germane as precursor gases. We have investigated the effect of temperature, pressure, and the inlet gas ratio on the growth and stoichiometry of Si(x)Ge(1-x) nanowires. The nanowires were characterized using scanning and transmission electron(More)
Thin HfO 2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate ͓Hf(NO 3) 4 ͔. Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and(More)
Atomic layer deposition of uniform thin hafnium oxide films has been demonstrated directly on H-terminated silicon surfaces using anhydrous hafnium nitrate (Hf(NO 3) 4) precursor and H 2 O vapor. Atomic layer deposition was initiated on hydrogen terminated silicon surfaces and occurred at substrate temperatures as low as 160°C. X-ray diffraction analysis(More)
A technique for depositing high-dielectric-constant metal–oxide thin films is demonstrated that consists of alternating pulses of metal–chloride precursors and Hf͑NO 3) 4 in which Hf͑NO 3) 4 is used as an oxidizing agent as well as a metal source. The use of Hf͑NO 3) 4 , rather than a separate oxidizing agent such as H 2 O, minimizes the potential for(More)
We have employed first-principles density-functional calculations to study the electronic characteristics of covalently functionalized graphene by metal-bis-arene chemistry. It is shown that functionalization with M-bis-arene (M = Ti, V, Cr, Mn, Fe) molecules leads to an opening in the bandgap of graphene (up to 0.81 eV for the Cr derivative), and as a(More)