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The temperature induced melting transition of a self-complementary DNA strand covalently attached at the 5' end to the surface of a gold interdigitated microelectrode (GIME) was monitored in a novel, label-free, manner. The structural state of the hairpin was assessed by measuring four different electronic properties of the GIME (capacitance, impedance,(More)
We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending on the concentration of nanowire suspension and the distribution of electrical field, various configurations of nanowire interconnects, such as single, chained, and branched nanowires(More)
Single-crystal SiGe nanowires were synthesized via the vapour-liquid-solid (VLS) growth mechanism using disilane and germane as precursor gases. We have investigated the effect of temperature, pressure, and the inlet gas ratio on the growth and stoichiometry of Si(x)Ge(1-x) nanowires. The nanowires were characterized using scanning and transmission electron(More)
Three-dimensional interdigitated electrodes (IDEs) have been investigated as sensing elements for biosensors. Electric field and current density were simulated in the vicinity of these electrodes as a function of the electrode width, gap, and height to determine the optimum geometry. Both the height and the gap between the electrodes were found to have(More)
Thin HfO 2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate ͓Hf(NO 3) 4 ͔. Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and(More)
Atomic layer deposition of uniform thin hafnium oxide films has been demonstrated directly on H-terminated silicon surfaces using anhydrous hafnium nitrate (Hf(NO 3) 4) precursor and H 2 O vapor. Atomic layer deposition was initiated on hydrogen terminated silicon surfaces and occurred at substrate temperatures as low as 160°C. X-ray diffraction analysis(More)
A technique for depositing high-dielectric-constant metal–oxide thin films is demonstrated that consists of alternating pulses of metal–chloride precursors and Hf͑NO 3) 4 in which Hf͑NO 3) 4 is used as an oxidizing agent as well as a metal source. The use of Hf͑NO 3) 4 , rather than a separate oxidizing agent such as H 2 O, minimizes the potential for(More)
Si0.5Geo0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a(More)
Arrays of covalently immobilized and aligned graphene ribbons have been successfully prepared on silicon wafers. The effect of covalent modification on the electrical properties of the single-layer graphene was investigated. The effective electron field mobility of the constructed FETs, measured at 2700 cm2V(-1) s(-1), was higher than that for graphene film(More)
Interdigitated electrode (IDE) arrays with nanometer-scale gaps have been utilized to enhance the sensitivity of affinity-based detection. The geometry of nanogap IDEs was first optimized on the basis of simulations of the electric field and current density. It was determined that the gap (G) between the electrodes was the most important geometric parameter(More)