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We report here on applying electric fields and dielectric media to achieve controlled alignment of single-crystal nickel silicide nanowires between two electrodes. Depending on the concentration of nanowire suspension and the distribution of electrical field, various configurations of nanowire interconnects, such as single, chained, and branched nanowires(More)
The temperature induced melting transition of a self-complementary DNA strand covalently attached at the 5' end to the surface of a gold interdigitated microelectrode (GIME) was monitored in a novel, label-free, manner. The structural state of the hairpin was assessed by measuring four different electronic properties of the GIME (capacitance, impedance,(More)
Three-dimensional interdigitated electrodes (IDEs) have been investigated as sensing elements for biosensors. Electric field and current density were simulated in the vicinity of these electrodes as a function of the electrode width, gap, and height to determine the optimum geometry. Both the height and the gap between the electrodes were found to have(More)
A technique for depositing high-dielectric-constant metal–oxide thin films is demonstrated that consists of alternating pulses of metal–chloride precursors and Hf͑NO 3) 4 in which Hf͑NO 3) 4 is used as an oxidizing agent as well as a metal source. The use of Hf͑NO 3) 4 , rather than a separate oxidizing agent such as H 2 O, minimizes the potential for(More)
Thin HfO 2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate ͓Hf(NO 3) 4 ͔. Properties of these films have been investigated using x-ray diffraction, x-ray reflectivity, spectroscopic ellipsometry, atomic force microscopy, x-ray photoelectron spectroscopy, and capacitance versus voltage measurements. Smooth and(More)
Atomic layer deposition of uniform thin hafnium oxide films has been demonstrated directly on H-terminated silicon surfaces using anhydrous hafnium nitrate (Hf(NO 3) 4) precursor and H 2 O vapor. Atomic layer deposition was initiated on hydrogen terminated silicon surfaces and occurred at substrate temperatures as low as 160°C. X-ray diffraction analysis(More)
Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb 2 Se 3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman),(More)
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