Raghavasimhan Sreenivasan

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We review the basics of the extremely thin SOI (ETSOI) technology and how it addresses the main challenges of the CMOS scaling at the 20-nm technology node and beyond. The possibility of V<sub>T</sub> tuning with backbias, while keeping the channel undoped, opens up new opportunities that are unique to ETSOI. The main device characteristics with regard to(More)
A new process of applying molecular resists to block HfO2 and Pt atomic layer deposition has been investigated. Monolayer films are formed from octadecyltrichlorosilane (ODTS) or tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor on native silicon oxide surfaces and from 1-octadecene on hydrogen-passivated silicon surfaces through a(More)
The binding of monomeric (Hp) and oligomeric (PHE) forms of porphyrin to glioblastoma (U-87MG) cells and the photosensitization of these cells have been studied. Upon binding to U-87MG cells, Hp and PHE exhibited fluorescence bands at 615 and 636 nm, respectively. The fluorescence and absorption spectra of Hp, HpD and PHE, measured in different solvents,(More)
Plateau phase glioblastoma (U 87MG) cells were found more photosensitive than the exponentially growing cells. In both phases of growth, the photosensitivity showed further enhancement on incubating the cells with HpD for longer duration. Plateau phase cells accumulated more HpD than exponential phase cells for shorter duration of incubation with HpD,(More)
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