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- Davide Resca, Alberto Santarelli, +4 authors D. M. M-P Schreurs
- IEEE Transactions on Microwave Theory andâ€¦
- 2008

Electron device modeling requires accurate descriptions of parasitic passive structures connecting the intrinsic electron device to the external world. In conventional approaches, the parasiticâ€¦ (More)

- Alberto Santarelli, Daniel Niessen, +5 authors Fabio Filicori
- IEEE Transactions on Microwave Theory andâ€¦
- 2014

A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulseâ€¦ (More)

- Christopher Florian, Rafael Cignani, Danielle Niessen, Alberto Santarelli
- IEEE Microwave and Wireless Components Letters
- 2012

A C-Band MMIC high power amplifier (HPA) has been designed exploiting a 0.25 μm HEMT GaN process on SiC substrate. The HPA is designed for future synthetic aperture radar (SAR) antennaâ€¦ (More)

- Alberto Santarelli, Rafael Cignani, +7 authors Fabio Filicori
- 2013 European Microwave Integrated Circuitâ€¦
- 2013

Nonlinear dynamic characterization of 1-mm GaN FETs is carried out by means of pulsed waveform excitations, applied through a recently proposed measurement setup. Due to fast trap capture phenomena,â€¦ (More)

- Alberto Santarelli, Danielle Niessen, +5 authors Filippo Filicori
- 2014 IEEE MTT-S International Microwave Symposiumâ€¦
- 2014

A double-pulse technique for the I/V characterization of GaN-based transistors is adopted for the nonlinear modeling of a 0.25 μm AlGaN/GaN on SiC FET. Experimental validation is provided byâ€¦ (More)

- Corrado Florian, Alberto Santarelli, Rafael Cignani, Fabio Filicori
- IEEE Transactions on Microwave Theory andâ€¦
- 2013

<?Pub Dtl?>A laboratory setup, along with a set of measurement and identification procedures, have been developed expressly for the characterization of the thermal behavior of AlGaN/GaN HEMTs,â€¦ (More)

- Alberto Santarelli, Rafael Cignani, +5 authors Fabio Filicori
- IEEE Microwave and Wireless Components Letters
- 2014

Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs),â€¦ (More)

- Francesco Scappaviva, Rafael Cignani, Christopher Florian, Guido Vannini, Filippo Filicori, Marziale Feudale
- 2008 European Conference on Wireless Technology
- 2008

This paper describes the design of a GaAs monolithic high power amplifier at Ku band. The chip delivers about 40 dBm of saturated output power, in CW operating conditions, at 11.7 GHz centralâ€¦ (More)

- Corrado Florian, Rafael Cignani, Alberto Santarelli, Fabio Filicori
- IEEE Transactions on Microwave Theory andâ€¦
- 2013

Two C-band monolithic high power amplifiers (HPAs) have been designed and implemented exploiting a 0.25-μm AlGaN/GaN HEMT process on an SiC substrate. The circuits have been designed for useâ€¦ (More)

- Davide Resca, Julio A. Lonac, +4 authors Fabio Filicori
- IEEE Transactions on Microwave Theory andâ€¦
- 2010

Cascode field-effect transistors (FETs) are widely used in the design of monolithic microwave integrated circuits (MMICs), owing to their almost unilateral and broadband behavior. However, since aâ€¦ (More)