Radhakrishnan Sithanandam

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In this paper, a compact analytical model for sub onset current, the current before the onset of Band-to-Band tunneling, is presented for tunnel field-effect transistor. Shockley-Reed-Hall (SRH) generation and recombination is used to explain the sub-onset current at the two reverse biased source/channel and channel/drain junctions. 2-D numerical(More)
In this paper, we propose a new hetero-material stepped gate (HSG) SOI LDMOS in which the gate is divided into three sections an n gate sandwiched between two p gates and the gate oxide thickness increases from source to drain. This new device structure improves the inversion layer charge density in the channel, results in uniform electric field(More)
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