Radhakrishnan Sithanandam

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In this paper, we propose a new hetero-material stepped gate (HSG) SOI LDMOS in which the gate is divided into three sections-an n + gate sandwiched between two p + gates and the gate oxide thickness increases from source to drain. This new device structure improves the inversion layer charge density in the channel, results in uniform electric field(More)
In this paper, a compact analytical model for sub onset current, the current before the onset of Band-to-Band tunneling, is presented for tunnel field-effect transistor. Shockley-Reed-Hall (SRH) generation and recombination is used to explain the sub-onset current at the two reverse biased source/channel and channel/drain junctions. 2-D numerical(More)
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