Rachid Bouchakour

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We propose a new way to design new memory cells assisted with a physical model taking into account reliability. First, we study the coupling ratio impact on the electric field and its consequences on cell hardness. The choice of coupling ratio in a new cell design should result from a compromise between a high K/sub e/ value in order to use low supply(More)
Full characterization of a new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is(More)
The aim of this work is to present two solutions developed to optimize Flash cell erasing time. These solutions have been proposed with our flash simulator based on Pao and Sah approach. This model was implemented in a common circuit simulator, Eldo, and used to study the Flash memory writing/erasing operations. Thank to simulations, we have proposed two(More)
Polyphase filters are an efficient solution for high image rejection and great accuracy quadrature generation in radio frequency (RF) receivers. Analytical modeling of passive polyphase filter suitable for RF front-end applications operating in 2.4 GHz frequency band is dealt with. This analytical analysis has been used to calibrate the optimal values of(More)
Polyphase filters are an efficient solution for high image rejection and great accuracy quadrature generation in radio frequency (RF) receivers. Analytical modeling of passive polyphase filter suitable for RF front-end applications operating in 2.4 GHz frequency band is dealt with. This analytical analysis has been used to calibrate the optimal values of(More)
Control gate I Select A model for static and transient simulations of an electrically erasable programmable read only memory cell has been U FG developed. This physical compact model is based on charge Source 1 1 Drain f 1 Bit line sheet approach which is able to describe the complete electrical behavior of the cell. In this model, we have introduced the(More)