Transverse mode selection has been introduced in a large area oxide-confined vertical-cavity surface-emitting laser (VCSEL) by etching a shallow (only 40-nm deep) surface relief. The circular relief… (More)
Selectively oxidized single-mode GaAs vertical-cavity surface-emitting lasers are investigated for biased 3-Gb/s and bias-free 1-Gb/s data links. Bit-error rates of better than 10/sup -11/ for… (More)
Bottom-emitting vertical-cavity surface-emitting InGaAs MQW lasers operating in the 980-nm wavelength regime have been designed for high continuous-wave optical output power. Devices of 200-/spl mu/m… (More)
It has been shown recently that the polarization of single- and multimode vertical-cavity surface-emitting lasers (VCSELs) can be defined and stabilized very effectively with a monolithically… (More)
We report on high-resolution linewidth measurements of proton-implanted InGaAs-GaAs VCSELs employing the delayed self-heterodyne method. Devices with 16-/spl mu/m active diameter exhibit record low… (More)
Vertical cavity surface-emitting lasers (VCSELs) with a well-defined and predictable polarization of the emitted light are sought for a number of applications. In this paper, we show that one can… (More)
GaAs quantum-well (QW)-based vertical-cavity surface-emitting lasers (VCSELs) at 855-nm emission wavelength are investigated for intraboard polymer waveguide links. We report a 3-Gb/s pseudorandom… (More)
Single- and multimode vertical-cavity surface-emitting lasers (VCSELs) with three unstrained GaAs quantum wells (QWs) and emission wavelengths around 850 nm have been fabricated using molecular beam… (More)