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Intsim: a CAD tool for optimization of multilevel interconnect networks
Interconnect issues are becoming increasingly important for ULSI systems. IntSim, an interconnect CAD tool, has been developed to obtain pitches of different wiring levels and die size for circuitExpand
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Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI)
Physical models are used to determine the ultimate potential performance of carbon nanotube interconnects and compare them with minimum-size copper wires implemented at various technologyExpand
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Performance Modeling and Optimization for Single- and Multi-Wall Carbon Nanotube Interconnects
TLDR
SWNT-bundles and MWNTs can be used to lower the delay of signal interconnects in semi-global and global levels. Expand
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IntSim: A CAD tool for optimization of multilevel interconnect networks
Interconnect issues are becoming increasingly important for ULSI systems. IntSim, an interconnect CAD tool, has been developed to obtain pitches of different wiring levels and die size for circuitExpand
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The Impact of Size Effects and Copper Interconnect Process Variations on the Maximum Critical Path Delay of Single and Multi-Core Microprocessors
We present a new closed-form compact model for conductor resistivity considering size effects, line-edge roughness and CMP dishing. Using this model, Monte Carlo simulations quantify the impact ofExpand
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Performance comparison between carbon nanotube and copper interconnects for GSI
The performances of minimum-size copper and carbon nanotube interconnects are compared for various ITRS generations. Results offer important guidance regarding the nature of carbon nanotubeExpand
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Accurate analysis of carbon nanotube interconnects using transmission line model
A new technique for analysing the time-domain response of carbon nanotube (CNT) interconnects, based on transmission line modelling, that takes the effects of both contact and fundamental (quantum)Expand
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New Approach to VLSI Buffer Modeling, Considering Overshooting Effect
TLDR
In this brief, we use the alpha power law model for MOS devices to reach a more accurate modeling of CMOS buffers in very deep submicrometer technologies. Expand
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On the study of anomalous skin effect for GSI interconnections
The change in the resistivity of a thin wire caused by anomalous skin effect (combined surface scattering and skin effect) is studied. The delay of a digital transmission line due to this effect isExpand
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Impact of size effects on the resistivity of copper wires and consequently the design and performance of metal interconnect networks
The impact of surface and grain boundary scattering on the design of multi-level interconnect networks and their latency distributions is reported. For the 18-nm technology node (year 2018), it isExpand
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