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Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure… Expand
Multiferroic BaTiO3-CoFe2O4 Nanostructures
We report on the coupling between ferroelectric and magnetic order parameters in a nanostructured BaTiO3-CoFe2O4 ferroelectromagnet. This facilitates the interconversion of energies stored in… Expand
Multiferroics: progress and prospects in thin films.
Multiferroic materials, which show simultaneous ferroelectric and magnetic ordering, exhibit unusual physical properties - and in turn promise new device applications - as a result of the coupling… Expand
Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films
- S. Jin, T. Tiefel, M. Mccormack, R. A. Fastnacht, R. Ramesh, L. Chen
- Materials Science, Medicine
- 15 April 1994
A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films of… Expand
Conduction at domain walls in oxide multiferroics.
Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of… Expand
Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films
The growth and characterization of functional oxide thin films that are ferroelectric, magnetic, or both at the same time are reviewed. The evolution of synthesis techniques and how advances in in… Expand
Above-bandgap voltages from ferroelectric photovoltaic devices.
- S. Y. Yang, J. Seidel, +9 authors R. Ramesh
- Materials Science, Medicine
- Nature nanotechnology
- 1 February 2010
In conventional solid-state photovoltaics, electron-hole pairs are created by light absorption in a semiconductor and separated by the electric field spaning a micrometre-thick depletion region. The… Expand
Domain wall nanoelectronics
Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark… Expand
Negative capacitance in a ferroelectric capacitor.
- A. Khan, K. Chatterjee, +6 authors S. Salahuddin
- Materials Science, Physics
- Nature materials
- 10 September 2014
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in… Expand
Deterministic switching of ferromagnetism at room temperature using an electric field
The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase… Expand