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Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
Enhanced polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
Multiferroics: progress and prospects in thin films.
Novel device paradigms based on magnetoelectric coupling are discussed, the key scientific challenges in the field are outlined, and high-quality thin-film multiferroics are reviewed.
Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films
A negative isotropic magnetoresistance effect has been observed in thin oxide films of perovskite-like La0.67Ca0.33MnOx, which could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized.
Above-bandgap voltages from ferroelectric photovoltaic devices.
A fundamentally different mechanism for photovoltaic charge separation is reported, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap.
Advances in magnetoelectric multiferroics
Progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and usage in applications are reviewed.
Conduction at domain walls in oxide multiferroics.
The observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3) shows that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall.
Negative capacitance in a ferroelectric capacitor.
Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.
Domain wall nanoelectronics
Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark
Deterministic switching of ferromagnetism at room temperature using an electric field
The kinetics of the switching process is examined, something not considered previously in theoretical work, and a deterministic reversal of the DM vector and canted moment using an electric field at room temperature is shown.