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Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structureExpand
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Multiferroic BaTiO3-CoFe2O4 Nanostructures
We report on the coupling between ferroelectric and magnetic order parameters in a nanostructured BaTiO3-CoFe2O4 ferroelectromagnet. This facilitates the interconversion of energies stored inExpand
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Multiferroics: progress and prospects in thin films.
Multiferroic materials, which show simultaneous ferroelectric and magnetic ordering, exhibit unusual physical properties - and in turn promise new device applications - as a result of the couplingExpand
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Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films
A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films ofExpand
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Conduction at domain walls in oxide multiferroics.
Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation ofExpand
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Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films
The growth and characterization of functional oxide thin films that are ferroelectric, magnetic, or both at the same time are reviewed. The evolution of synthesis techniques and how advances in inExpand
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Above-bandgap voltages from ferroelectric photovoltaic devices.
In conventional solid-state photovoltaics, electron-hole pairs are created by light absorption in a semiconductor and separated by the electric field spaning a micrometre-thick depletion region. TheExpand
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Domain wall nanoelectronics
Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in starkExpand
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Negative capacitance in a ferroelectric capacitor.
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance inExpand
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Deterministic switching of ferromagnetism at room temperature using an electric field
The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phaseExpand
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