#### Filter Results:

- Full text PDF available (0)

#### Publication Year

1969

1987

- This year (0)
- Last 5 years (0)
- Last 10 years (0)

#### Co-author

#### Journals and Conferences

Learn More

- R. R. Troutman
- IEEE Transactions on Electron Devices
- 1979

Drain-induced barrier lowering (DIBL) determines the ultimate proximity of surface diffusions and qualifies as one of the fundamental electrical limitations for VLSI. The important design parametersâ€¦ (More)

- R. R. Troutman
- IEEE Circuits and Devices Magazine
- 1987

It is shown how a conceptually simple definition of a pnpn structure's blocking state is also a precise statement of when latchup occurs, a statement that leads to a concise (there are no fittingâ€¦ (More)

- R. R. Troutman, H. P. Zappe
- IEEE Transactions on Electron Devices
- 1983

This paper presents an analytical model of transient latchup in bulk CMOS that predicts the time-dependent current and voltage characteristics of the parasitic p-n-p-n structure. Not only does theâ€¦ (More)

- R. R. Troutman
- IEEE Electron Device Letters
- 1983

n-well guard rings have long been used for isolating potential electron injectors to avoid latch-up of CMOS circuits. Such guard rings are shown to be orders of magnitude more efficient for CMOSâ€¦ (More)

- R. R. Troutman
- IEEE Transactions on Electron Devices
- 1977

This paper develops a general threshold equation for long-channel insulated gate field-effect transistors which accounts for the effects of ion-implant profiles used in threshold tailoring. Althoughâ€¦ (More)

- R. R. Troutman, M. J. Hargrove
- IEEE Transactions on Electron Devices
- 1986

Substrate resistance in epitaxial-CMOS is more appropriately viewed as a lossy transmission line than as a lumped resistor or as a resistance ladder network. Lossy transmission lines can be used toâ€¦ (More)

- R. R. Troutman, A.G. Fortino
- IEEE Transactions on Electron Devices
- 1977

The threshold voltage of a short-channel IGFET can be expressed, in relation to that for a long-channel device, asV_{T} = V_{TLC} - \alpha - \betaV_{DS}. This behavior is deduced from a chargeâ€¦ (More)

- R. R. Troutman
- IEEE Transactions on Electron Devices
- 1976

Results are presented for both theoretical and experimental analyses of low-level avalanche multiplication in an insulated gate field-effect transistor (IGFET). The theoretical model is derived fromâ€¦ (More)

- R. R. Troutman, T. V. Harroun, P R Cottrell, S. R. Chakravarti
- IEEE Transactions on Electron Devices
- 1980

This paper presents a channel hot-electron degradation model that is valid for both fixed and time-varying bias conditions. A simple relationship has been derived for the practical case of identical,â€¦ (More)

- R. R. Troutman
- IEEE Transactions on Electron Devices
- 1975

An explicit expression has been derived for the subthreshold slope of an insulated gate field-effect transistor. This expression is used to explore the influence of surface band-bending, gateâ€¦ (More)