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Silicon spintronics.
Key developments and achievements are reviewed, the building blocks of silicon spintronics are described, and Unexpected and puzzling results are discussed, and open issues and challenges identified.
Electrical creation of spin polarization in silicon at room temperature
The control and manipulation of the electron spin in semiconductors is central to spintronics, which aims to represent digital information using spin orientation rather than electron charge. Such
Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
Although the creation of spin polarization in various nonmagnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily
Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions
The temperature dependence of spin-polarized tunneling is investigated between 77 and 420 K for various ferromagnetic tunnel junctions. Both the junction resistance and the magnetoresistance decrease
Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling
The demonstration of Seebeck spin tunnelling is described and reported, a distinctly different thermal spin flow generated in a tunnel contact between electrodes of different temperatures when at least one of the electrodes is a ferromagnet.
The spin-valve transistor: a preview and outlook
Combining ferromagnetic and semiconductor materials is a challenging route to create new options for electronic devices in which the spin of the electron is employed. The spin-valve transistor (SVT)
Step-induced uniaxial magnetic anisotropy of La0:67Sr0:33MnO3 thin films
The magnetic anisotropy of epitaxial La0.67 Sr0.33 MnO3 (LSMO) thin films on vicinal, TiO2 -terminated SrTiO3 substrates is investigated. Atomic force microscopy shows a regular step-terrace
Large spin accumulation voltages in epitaxial M n 5 G e 3 contacts on Ge without an oxide tunnel barrier
Spin injection in high-quality epitaxial $\mathrm{M}{\mathrm{n}}_{5}\mathrm{G}{\mathrm{e}}_{3}$ Schottky contacts on $n$-type Ge has been investigated using a three-terminal Hanle effect measurement.
Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets
This work presents a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface and demonstrates that in this way the resistance–area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization.