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Interleukin-13 (IL-13)/IL-13 Receptor α1 (IL-13Rα1) Signaling Regulates Intestinal Epithelial Cystic Fibrosis Transmembrane Conductance Regulator Channel-dependent Cl− Secretion*
Interleukin-13 (IL-13) has been linked to the pathogenesis of inflammatory diseases of the gastrointestinal tract. It is postulated that IL-13 drives inflammatory lesions through the modulation ofExpand
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Clinical comparability of albuterol delivered by the breath-actuated inhaler (Spiros) and albuterol by MDI in patients with asthma.
STUDY OBJECTIVE This study compares the efficacy and safety of one and two actuations of albuterol sulfate powder delivered via a breath-actuated, effort-assisted, investigational inhaler (Spiros,Expand
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Influence of fluorine implant on boron diffusion: Determination of process modeling parameters
The effects of low‐dose ion implants with Si+, Ne+, and F+ on the transient enhanced diffusion of B in silicon after annealing at 900 °C for 30 min have been investigated. Processing conditions suchExpand
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Sidegating in a GaAs MBE-grown HFET structure
The sidegating effect in a MBE-grown HFET GaAs structure is considerable and persists to large distances. On the other hand, the leakage current is very low. A model that takes into account theExpand
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Using oxide sidewall taper to improve breakdown voltage in planar junction of DMOS devices by a simple process
Argon ion implantation was used to create a damaged surface layer on field oxide. Subsequent oxide etching created a tapered oxide transition from thin oxide to thick field oxide. This structureExpand
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The role of crystal-growth properties on silicon implant activation processes for GaAs
Crystal properties such as bulk resistivity, mobility, and dislocation density which influence ion‐implantation activation are reported for liquid‐encapsulated Czochralski, horizontal gradientExpand
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Inhibition of etching in oxygen-implanted AlGaAs
Ion bombardment for the formation of thermally stable, high resistivity layers in GaAs and AlGaAs is well known. The impact of this device isolation scheme on subsequent processing steps is lessExpand
Characterization of n‐type regions in GaAs formed by silicon fluoride molecular ion implantations
Implantations of silicon and silicon fluoride ions into semi‐insulating GaAs wafers were performed to compare and evaluate the quality of the n‐type layers that were produced. The use of SiFxExpand
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