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A multi-standard, multi-band fully-integrated interstage filter-free receiver with integrated auto-centered TX leakage filtering is fabricated in a 65 nm CMOS technology. The measured TX selectivity in UMTS band II is 9.1 dB, the receiver gain at 1.96 GHz is 54.1 dB, and NF is 3.68 dB. The 0.5 dB reference sensitivity degradation caused by TX leakage is(More)
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