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We present a design study for a nano-scale crossbar memory system that uses memristors with symmetrical but highly nonlinear current-voltage characteristics as memory elements. The memory is non-volatile since the memristors retain their state when un-powered. In order to address the nano-wires that make up this nano-scale crossbar, we use two coded(More)
The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage(More)
Structures composed of transition metal oxides can display a rich variety of electronic and magnetic properties including superconductivity, multiferroic behavior, and colossal magnetoresistance. [ 1 ] An additional property of technological relevance is the bipolar resistance switching phenomenon [ 2–4 ] seen in many perovskites [ 5–7 ] and binary oxides [(More)
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ per bit per μm2), low read-power (∼nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy(More)
We report the observation of two resistance switching modes in certain 50 nm × 50 nm crossbar TiO(2) memristive devices that have been electroformed with a low-current process. The two switching modes showed opposite switching polarities. The intermediate state was shared by both modes (the ON state of the high-resistance mode or the OFF state of the(More)
We used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled with microscopy to characterize the electronic, structural and chemical properties of bipolar resistive switching devices. Metal/TiO2/metal devices were electroformed with both bias polarities and then physically opened to study the resulting material changes(More)
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