Learn More
Ion implantation, followed by annealing process, often leads to nonuniform doping and considerable depletion effect in the polysilicon gate of submicron MOS devices. Such an effect can alter notably the subthreshold characteristics and invalidate the conventional subthreshold current model. This paper studies the polysilicon-gate depletion effects on the(More)
This paper presents transition from coplanar waveguide (CPW) to rectangular waveguide for <i>W</i> -band (75-110 GHz) operations. The waveguide consists of a cosine-shaped fin extending from the upper waveguide wall onto the CPW signal electrode. The design features direct integration of the waveguide with opto-electronic devices on lithium niobate(More)
—The paper presents integrated probe for direct coupling to the WR-10 waveguide with the use of metal filled vias on both sides of the microstrip line. Design and optimization of this novel microstrip-to-waveguide transition has been performed using 3-D finite element method based software HFSS (High Frequency Structure Simulator). A back-to-back transition(More)
  • 1