R. N. Nottenburg

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Bipolar transistors with subpicosecond extrinsic delay are discussed. These InP/InGaAs heterostructure transistors show a unity-current-gain cutoff frequency f/sub $/T=165 GHz and maximum oscillation frequency f/sub MAX/=100 GHz at room temperature. The authors model shows that an f/sub $/T beyond 386 GHz is obtainable by further vertical scaling. Ring(More)
Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3*3 and 0.8*3 mu m/sup 2/, respectively. These results are comparable with scaling experiments reported for Si bipolar devices and represent a significant improvement over AlGaAs/GaAs heterostructure bipolar transistors. Both the low surface(More)
InGaAs/InP double-heterostructure bipolar transistors (DHBT's) with current gain &#946; &#8764; 630 have been realized using gas-source molecular beam epitaxy (GSMBE). These devices exhibit near-ideal &#946; versus I<inf>C</inf>characteristic (i.e., &#946; independent of I<inf>C</inf>) with a small-signal gain<tex>h_{fe} \sim 180</tex>at<tex>I_{C} \sim(More)
Double-heterostructure InGaAs(P)/InP bipolar transistors ranging in emitter size from 5 &#215; 10 to 100 &#215; 150 &#181;m<sup>2</sup>have been fabricated using a non-self-aligned technology. These transistors exhibit current gains as high as 275 independent of emitter perimeter-to-area ratio. The best frequency of unity current gain was measured in the(More)
The avalanche process in the collector of abrupt Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors (HBTs) is reported. It is reported that the collector multiplication constant decreases monotonically with increasing base thickness. When the base thickness is less than the mean-free path for energy relaxation in the(More)
Experiments and calculations are used to illustrate the role of nonequUibrium electron transport in determining the performance of InP/Inos3Gao47As heterostructure bipolar transistors. The intrinsic small signal response of devices operated under low voltage bias conditions is subpicosecond. However, with increasing bias the intrinsic speed of devices(More)
MBE grown double heterostructure InAlAs/InGaAs p-i-n photodiodes have been flip-chip mounted on coplanar waveguides. Two methods: (i) incorporation of doping setback InAlAs layers between the InGaAs absorption region and the doped InAlAs layers and (ii) compositional grading have been used to reduce carrier pile-up at the heterointerfaces. Although both(More)
It is shown how an understanding of the physics of nonequilibrium electron transport in III-V semiconductors can usefully be applied to determining the limits of n-p-n InP/In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistor device performance. For example, it is seen that nonequilibrium transport in In/sub 0.53/Ga/sub 0.47/As improves static(More)
Floating base Al<inf>0.4</inf>Ga<inf>0.6</inf>As heterojunction bipolar transistors have been grown with MBE with optical gains near unity at illumination levels down to &lt; 10 pW for a 5 &#215; 10<sup>-4</sup>cm<sup>2</sup>device area. Dark currents are below 1 pA for the best devices. A maximum gain of 8 to 10 is observed at &#8764; 1(More)