R.M. Pluta

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A model is derived for an oxide-isolated ISL gate with 3-µm minimum details and fan-out = 4. The model includes an n-p-n transistor, a p-n-p transistor, a silicon diode, and four Schottky-barrier diodes. Special attention is paid to all temperature coefficients of the device parameters. Very good agreement is obtained with measurements in the(More)
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