R H Finch

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The single cell failure of a 90 nm SOI SRAM cell presents a difficult challenge for physical failure analysis, including cross sectional TEM, planar TEM, PVC, and FIB. The physical analysis of the failing SRAM cells by these techniques often did not find any visual defects. In order to locate the defects of the failed SRAM cells, a characterization of the(More)
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