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The observation of vanishing electrical resistance in condensed matter has led to the discovery of new phenomena such as, for example, superconductivity, where a zero-resistance state can be detected in a metal below a transition temperature T(c) (ref. 1). More recently, quantum Hall effects were discovered from investigations of zero-resistance states at… (More)

- R G Mani
- 2005

We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high-mobility two-dimensional electron system ͑2DES͒. In analogy to the 2D Shubnikov–de Haas effect, the characteristic field B f and the period of the radiation-induced magnetoresistance oscillations appear dependent upon the component of the applied… (More)

- R G Mani
- 2008

The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields B = [4/(4j + 1)]B f , where B f = 2πfm * /e, m * is an the effective mass, e is the charge, f is the microwave frequency, and j =1,2,3... Here, we report transport with… (More)

- R G Mani, V Narayanamurti, K Von Klitzing, J H Smet, W B Johnson, V Umansky
- 2004

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage-current characteristics, and the resistance… (More)

- Aruna N Ramanayaka, Ramesh G Mani
- 2015

This thesis consists of two parts. The first part considers the effect of microwave radiation on magnetotransport in high quality GaAs/AlGaAs heterostructure two dimensional electron systems. The effect of microwave (MW) radiation on electron temperature was studied by investigating the amplitude of the Shubnikov de Haas (SdH) oscillations in a regime where… (More)

Phase study of oscillatory resistances in microwave-irradiated-and dark-GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, ν. At large-ν, the dark study indicates several distinct phase… (More)

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