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High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electrical and optical short pulse applications. The highest power application, which we are developing, is a compact, repetitive, short pulse linear induction accelerator. The array of PCSS, which drive the accelerator, will switch 75 kA and 250 kV in 30 ns long(More)
We highlight one interpretation of Pearson's r (largely unknown to behavioral scientists), inspired by the genetic measurement of inbreeding. The coefficient of inbreeding, defined as the probability that two paired alleles originate from common descent, equals the correlation between the uniting gametes. We specify the statistical conditions under which r(More)
We have assessed the reliability and performance of the optically triggered Bulk Avalanche Semiconductor Switch (BASS) in a variety of test conditions. For a nominal characterization diagnostic, we have adopted a 50 ohm video transmission line having a pulsewidth of 0.5 ns. At 14 kV input voltage, producing nearly 1 MW output pulses in a 50 ohm video(More)
We describe time and space resolvcd electro-absortion and electro-optic measurement techniques for high power photoconductors. The methods utilized to observe the internal dynamic behavior of the device electric fields. The following two sections detail the methods for utilizing EA and EO probes in high power photoconductors, respectively. Typical results(More)
Fault isolation of AC failures on semiconductor devices using dynamic T-LSIM (thermal laser signal injection microscopy) has proven itself capable of detecting elevated resistance from a single internal via. Design simulations varying the resistance at the via detected during dynamic phase delay T-LSIM analysis replicated the AC failure mode proving that(More)
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