R. F. A. Freeman

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The Complementary Metal-Oxide-Semiconductor (CMOS) device is a very desirable form of technology for space use despite the low tolerance to radiation exhibited by current commercial samples. It is thus important to establish "hardness engineering" methods for systems employing these devices. It is necessary to deploy a wide variety of design methods to(More)
A mathematical model for the electrical consequence of charge buildup in metal-oxide-semiconductor devices has been investigated and found to be useful. It can be used (a) for comparing experimental data from different sources and (b) for making predictions of the lifetime of MOS circuits exposed to radiation in space or laboratory environments. A wide(More)
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