R. E. Leoni

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—AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrates have for the first time been realized using organometallic vapor phase epitaxy (OMVPE). Using 1-cm p-Si(111), these devices exhibited static output characteristics with low output conductance and isolation approaching 80 V. Under microwave rf operation, the substrate charge becomes(More)
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