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Journals and Conferences
An<tex>X</tex>-band monolithic three-stage low-noise amplifier (LNA) employing series feedback has demonstrated 1.8-dB noise figure with 30.0-dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain an exactly repeatable series feedback inductance to achieve a simultaneous noise match and input… (More)
Monolithic 3-dB Lange couplers have been fabricated on semi-insulating GaAs. Loss at the center frequency of 9.5 GHz is 0.7 dB.
An integrated MMIC diffraction grating antenna has been developed which provides an electronic beam scanning capability at mm-wave frequencies. The grating antenna has been designed to operate near the second Bragg diffraction condition using a corrugated ceramic structure. To provide frequency scan capability, a GaAs varactor-controlled oscillator/buffer… (More)
Vertically oriented GaAs MESFET's were fabricated on thick epitaxial conductive layers grown by molecular-beam epitaxy on a semi-insulating substrate. The vertical channel pattern was defined by electron-beam lithography and included structures as small as 0.3- 0.4 µm on a total period of 1.0 µm. The vertical channels were formed by reactive ion… (More)
A GaAs FET power amplifier module operating in K-band is described. The module has integral input and output WR-51 waveguide ports and incorporates a pair of low-loss waveguide to microstrip transitions. Single-stage and multi-stage microstrip FET amplifiers are fabricated on individual copper carrier blocks incorporating in-package impedance matching. Six… (More)
This paper will describe an X-band amplifier with a 29.7dB gain and 4.0dB noise figure. Amplification is provided by three identical 300μm gate-width, 0.5μm gate-length FETs operated in a common-source configuration.