R. Alcubilla

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The electrophysiological characterisation of cultured neurons is of paramount importance for drug discovery, safety pharmacology and basic research in the neurosciences. Technologies offering low cost, low technical complexity and potential for scalability towards high-throughput electrophysiology on in vitro neurons would be advantageous, in particular for(More)
The nanostructuring of silicon surfaces--known as black silicon--is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to(More)
Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie(More)
In this Letter we report on the thermal properties of macroporous silicon photonic crystals with the unit cell gradually varied along the pore axis. We show experimentally that arbitrarily large omnidirectional total-reflectance bands can be produced with such structures. We also demonstrate that those bands can be effectively used to reduce thermal(More)
Since the discovery of conductivity in polymers and certain organic molecules, remarkable progress has been made in synthesizing organic materials, in understanding their properties and in developing them for use in electronic and optical devices [1]. Currently, polymer and organic light-emitting diodes (LEDs) [2], photovoltaic cells [3] and field effect(More)
—In this paper, we describe the activity developed since 2005 at the Universitat Politecnica de Catalunya were students fabricate their own electronic devices based on organic semiconductors. The relative simplicity and low-cost of the systems used to fabricate this kind of devices, together with the harmless character of the processes and materials that(More)
The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were(More)
We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al 2 O 3 , reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination velocity results from a higher sensitivity of the nanostructures to surface charge and from the absence of surface damage after black(More)