R.A. Sailer

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
Indium tin oxide (ITO) films were deposited via atmospheric-pressure plasma-enhanced chemical vapor deposition (APPD) using indium acetylacetonate, indium trifluoroacetylacetonate and tin trifluoroacetylacetonate as metal-organic precursors. A film growth temperature of 300 °C gave highly-transparent films with modest conductivity. Post-deposition(More)
  • 1