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— A high efficiency digital MMIC amplifier for mobile communication switch-mode concepts was designed by utilizing a 0.25 μm GaN HEMT technology with f T of 32 GHz. A comparative investigation of two different driver concepts for a 1.2 mm GaN HEMT PA is shown. The MMICs were on-wafer evaluated for class-D and class-S operation. A drain efficiency of 70% for(More)
Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology.(More)
This paper compares three single-ended distributed amplifiers (DAs) realized in an in-house InP/InGaAs double heterojunction bipolar transistor technology featuring an f/sub t/ and f/sub max/ larger than 200 GHz. The amplifiers use five or eight gain cells with cascode configuration and emitter follower buffering. Although the technology is optimized for(More)
For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new(More)
In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/GaN HEMTs with a gate length of 100 nm. The compact model yields a parasitic shell topology and is scalable from two up to eight transistor-fingers and is valid for finger lengths from 15 μm to 100 μm. It accurately covers the frequency range(More)
An 80 Gbit/s monolithically integrated clock and data recovery (CDR) circuit with 1:2 demultiplexer (DEMUX) is reported. The integrated circuit (IC) is manufactured using an InP double heterostructure bipolar transistor (DHBT) technology which features cut-off frequency values of more than 220 GHz for both f/sub T/ and f/sub max/. The CDR circuit is mainly(More)
A state-space approach to large-signal (LS) modeling of high-speed transistors is presented and used as a general framework for various model descriptions of the dispersive features frequently observed for HEMTs at low frequency. Ensuring unrestricted LS-small-signal (SS) model compatibility, the approach allows to construct LS models from multibias SS(More)
—The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 μm and 0.15 μm AlGaN/GaN microstrip(More)