Rémi Gaillard

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This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in Complementary Metal Oxide Semiconductor (CMOS) logic circuits: TMC DASIE (Transient Monte-Carlo Detailed Analysis of Secondary Ion Effects). The production and effects of Single-Event Transients inside CMOS combinational logic gates are examined. First(More)
In the context of the CERN 'Radiation To Electronics (R2E)' project, the vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analysed. The tested parts include analog, linear, digital, and hybrid devices and a summary of radiation test results is(More)
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