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Ordering is observed at SiO2/Si(1 0 0) interfaces when 2–40 nm thick SiO2 films are grown on passivated, ordered (1 ×1) Si(1 0 0) surfaces produced by a novel wet chemical cleaning. A mechanism is… (More)
We use ion beam analysis to probe the structure and interface of ultrathin thermal oxide films grown on (1×1) Si(100) surfaces prepared using the Herbots-Atluri [U.S. patent No. 6,613,677 (Sept. 2,… (More)