Qiumin Jin

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The negative-bias-temperature-instability (NBTI) characteristic of PMOS high-k metal-gate (HKMG) bulk FinFETs with different interlayer (IL) fabrication process is investigated in this paper. Compared with chemical oxide IL, both post IL anneal and thermal oxidized IL can improve the device NBTI performance, which is due to the reduction of interface trap(More)
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