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In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar(More)
In this work, we propose a new memristor SPICE model that accounts for the typical synaptic characteristics that have been previously demonstrated with practical memristive devices. We show that this model could account for both volatile and non-volatile memristance changes under distinct stimuli. We then demonstrate that our model is capable of supporting(More)
Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an(More)
According to the HP memristor model with linear do pant drift, the electrical characteristics of memristor are analyzed. Then, the transmission characteristics of memristor based noninverting op amplifier are investigated. The theoretical results are well demonstrated by the SPICE circuit simulation with a published memristor sub circuit with linear do pant(More)
RATIONALE Analog-to-digital converter (ADC)-based acquisition systems are widely applied in time-of-flight mass spectrometers (TOFMS) due to their ability to record the signal intensity of all ions within the same pulse. However, the acquisition system raises the requirement for data throughput, along with increasing the conversion rate and resolution of(More)
Crossbar is the basic structure for RRAM massive applications, while as the increase of integration level and density of RRAM crossbar array, the line resistance is becoming the key problem, which affects the write and read operation of the device in array. Based on RRAM 1D-1R(1-diode 1-resistor) structure with V/3 bias scheme, this paper analyzes the line(More)
Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the metal cation and oxygen vacancy in this behavior is unclear. In(More)