Qing'an Li

Learn More
Micro-Controller Units (MCUs) are widely adopted ubiquitous computing devices. Due to tight cost and energy constraints, MCUs often integrate very limited internal RAM memory on top of Flash storage, which exposes Flash to heavy write traffic and results in short system lifetime. Architecting emerging Phase Change Memory (PCM) is a promising approach for(More)
As technology scales down, energy consumption is becoming a big problem for traditional SRAM-based cache hierarchies. The emerging Spin-Torque Transfer RAM (STT-RAM) is a promising replacement for large on-chip cache due to its ultra low leakage power and high storage density. However, write operations on STT-RAM suffer from considerably higher energy(More)
Hybrid caches consisting of both STT-RAM and SRAM have been proposed recently for energy efficiency. To explore the advantages of hybrid cache, most work on hybrid caches employs migration based strategies to dynamically move write-intensive data from STT-RAM to SRAM. Migrations require additional read and write operations for data movement and may lead to(More)
Spin-Transfer Torque RAM (STT-RAM) is extensively studied in recent years. Recent work proposed to improve the write performance of STT-RAM through relaxing the retention time of STT-RAM cell, magnetic tunnel junction (MTJ). Unfortunately, frequent refresh operations of volatile STT-RAM could dissipate significantly extra energy. In addition, refresh(More)
Worst-Case Execution Time (WCET) is one of the most important metrics in real-time embedded system design. For embedded systems with clustered VLIW architecture, register allocation, instruction scheduling, and cluster assignment are three key activities to pursue code optimization which have profound impact on WCET. At the same time, these three activities(More)
Spin-Torque Transfer RAM (STT-RAM) is a promising candidate for SRAM replacement because of its excellent features, such as fast read access, high density, low leakage power, and CMOS technology compatibility. However, wide adoption of STT-RAM as cache memories is impeded by its long write latency and high write power. Recent work proposed improving the(More)