Qing Su

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In this paper, a layout dependent full-chip electroplating (ECP) topography model is developed based on the additive nature of the physics of the EP process. Two layout attributes: layout density, and feature perimeter sum are used to compute the post-ECP topography. Under a unified mechanism, two output variables representing the final topography: the(More)
In deep submicron feature sizes continue to shrink aggressively beyond the natural capabilities of the 193 nm lithography used to produce those features thanks to all the innovations in the field of resolution enhancement techniques (RET). With reduced feature sizes and tighter pitches die level variations become an increasingly dominant factor in(More)
We study the octilinear Steiner tree to evaluate the rectilinear Steiner tree based router. First, we give the worst and average case wirelength for rectilinear routing and octilinear routing for two terminals net. Next, we show the octilinear Steiner trees have smaller wirelength reduction for multiterminal net than that of rectilinear Steiner tree. Then,(More)
ii-To my parents, Huan, and Rucheng-iii-ACKNOWLEDGMENTS I would like to show my sincerest gratitude to my co-advisors, Professor Edwin K. P. Chong and Professor Ness B. Shroff for giving me copious amounts of insight-ful guidance, constant encouragement, constructive criticism, and expertise on every subject that arose throughout all these years. Their(More)
This article focuses on the formulation of the substrate resistive coupling using boundary element methods, specifically for substrates without grounded backplates (floating substrates). An accurate and numerically stable formulation is presented. Numerical results are shown to demonstrate the correctness and the numerical robustness of the formulation.
Temperature dependent He-irradiation-induced ion-beam mixing between amorphous silicon oxycarbide (SiOC) and crystalline Fe was examined with a transmission electron microscope (TEM) and via Rutherford backscattering spectrometry (RBS). The Fe marker layer (7.2 ± 0.8 nm) was placed in between two amorphous SiOC layers (200 nm). The amount of ion-beam mixing(More)