Learn More
The bacteriophage population is large, dynamic, ancient, and genetically diverse. Limited genomic information shows that phage genomes are mosaic, and the genetic architecture of phage populations remains ill-defined. To understand the population structure of phages infecting a single host strain, we isolated, sequenced, and compared 627 phages of(More)
The Terahertz performances of Wurtzite (α-phase) and Zinc-Blende (β-phase) of GaN based p + pnn + DDR IMPATTs has been investigated at optimum bias current density. The modeling and simulation based on drift diffusion model has been carried out to study the DC and small signal properties of the device. The bias current optimization is based on maximum(More)
We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially(More)
ZnO based bottom-gate thin film transistor (TFT) with SiO2 as insulating layer has been fabricated with two different structures. The effect of formation of mesa structure on the electrical characteristics of the TFTs has been studied. The formation of mesa structure of ZnO channel region can definitely result in better control over channel region and(More)
In this paper we report a theoretically simulated Hg<sub>1-x</sub>Cd<sub>x</sub>Te based heterojunction medium wavelength infrared (MWIR) photodetector for operation at temperature 78 K. The detector is designed to operate at strategic atmospheric window in the MWIR (3.8 mum) region with a high value of detectivity (&gt;10<sup>8</sup>(More)
The paper presents the results of our experimental investigation pertaining to tailoring of energy bandgap and other associated characteristics of undoped and Al doped ZnO (AZO) thin film by varying the atomic concentration of Al in ZnO. Thin films of ZnO and ZnO doped with Al (1, 3, and 5 atomic percent (at.%)) were deposited on silicon substrate for(More)
  • 1