Pritesh Parikh

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We study the strain state of doubly clamped VO2 nanobeam devices by dynamically probing resonant frequency of the nanoscale electromechanical device across the metal-insulator transition. Simultaneous resistance and resonance measurements indicate M1-M2 phase transition in the insulating state with a drop in resonant frequency concomitant with an increase(More)
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semi-insulating (HPSI) 4H-SiC substrates. MESFETs with a MTTF of over 200 hours when operated at a T J =295 °C are presented. High power SiC MMIC amplifiers are shown with excellent yield and repeatability using a released(More)
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