Pritesh Parikh

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Hybrid organic-inorganic materials for high-efficiency, low-cost photovoltaic devices have seen rapid progress since the introduction of lead based perovskites and solid-state hole transport layers. Although majority of the materials used for perovskite solar cells (PSC) are introduced from dye-sensitized solar cells (DSSCs), the presence of a perovskite(More)
Field-plates remarkably enhanced large-signal performance of GaN HEMTs by reducing trapping effect and increasing breakdown voltages. Power densities exceeding 30W/mm at 4GHz were demonstrated with gate-connected field plates. Further development of source-connected field pates boosted large-signal gain by 5-7dB, while maintaining the benefit of the field(More)
We study the strain state of doubly clamped VO2 nanobeam devices by dynamically probing resonant frequency of the nanoscale electromechanical device across the metal-insulator transition. Simultaneous resistance and resonance measurements indicate M1-M2 phase transition in the insulating state with a drop in resonant frequency concomitant with an increase(More)
OBJECTIVE The e-BioMatrix is a post marketing multicenter registry with an objective to evaluate the 2 year clinical safety and efficacy outcomes in patients treated with BioMatrix™ - Biolimus A9™ (BA9™) drug eluting stents (DES). BACKGROUND Drug-eluting stents still have late-stage disadvantages that might be attributable to the permanent polymer.(More)
Total Yield with an escape depth of approximately 100-200 A is known to be rather surface sensitive. Fluorescence Yield, on the other hand, with an escape depth of approximately 1000-2000 A is relatively less prone to surface effects but necessitates some corrections to obtain the true signal. Both have their plus and minus points and, if used with care,(More)
The semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to(More)
Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band(More)
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