Prasad Venkatraman

  • Citations Per Year
Learn More
This paper discusses the breakdown voltage (BV<sub>DSS</sub>) characteristics of an n-channel charge balanced shielded gate trench power MOSFET. The study emphasizes on elements that affect the BV<sub>DSS</sub> stability of such devices to gain good control on design and process/device parameters in order to produce a robust product. Breakdown voltage(More)
  • 1