Prantik Chakraborty

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Hot carrier reliability of a nanowire Omega-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO<sub>2</sub>) interface of Omega-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high(More)
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