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Hot carrier reliability of a nanowire Omega-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO<sub>2</sub>) interface of Omega-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high… (More)
Drain-induced barrier lowering in substrate-induced strained-Si n-MOSFETs has been investigated. The variation of subthreshold swing as a function of both the gate length and gate to source voltage has also been examined.
Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.