Pragya Kushwaha

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Continuous technology advancements have forced MOSFET architecture to evolve from bulk to SOI to multigate MOSFETs. BSIM compact models have helped circuit designers to realize their designs first time correct using accurate physical models used in SPICE simulation. BSIM3 and BSIM4 are threshold voltage based bulk MOSFET models while BSIM6 is charge based(More)
In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data,(More)
In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around V<sub>bs</sub>=V<sub>bd</sub>=0V. Symmetry of the model is successfully(More)
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